发明名称 COUPLED QUANTUM DOT AND QUANTUM WELL SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME
摘要 A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between adjacent layers of the device; and providing a layer of quantum dots (825, 875) disposed in one of the adjacent layers, and spaced from the quantum well, whereby carriers can tunnel in either direction between the quantum well and the quantum dots.
申请公布号 WO03012834(A1) 申请公布日期 2003.02.13
申请号 WO2002US24379 申请日期 2002.07.31
申请人 THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS;BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM 发明人 HOLONYAK, NICK, JR.;DUPUIS, RUSSELL
分类号 H01L29/06;H01L29/12;H01L29/66;H01L33/06;H01S5/34;H01S5/343;(IPC1-7):H01L21/00 主分类号 H01L29/06
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