发明名称 |
Ozone-enhanced oxidation for high-k dielectric semiconductor devices |
摘要 |
A low temperature ozone-enhanced oxidation process is presented whereby amorphous high dielectric constant film devices are subject to oxidation processes at temperatures whereby crystallization of the amorphous high dielectric constant film is avoided, thereby lowering leakage currents and reducing the required thickness to achieve an equivalent SiO2 thickness (EOT).
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申请公布号 |
US2003032303(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20010928377 |
申请日期 |
2001.08.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YU MO-CHIUN;LIN YEOU-MING |
分类号 |
H01L21/28;H01L21/311;H01L21/314;H01L21/316;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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