| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus of manufacturing a high-accuracy thin-film device wherein the film thickness of a transparent film being worked and the distribution of the film thickness are measured with high accuracy, the film thickness on the outermost surface is measured with high accuracy during a CMP working operation, without being influenced by the distribution of the film thickness in an LSI region generated in the CMP working operation or inside a semiconductor wafer face, and the film thickness can be controlled with high accuracy. SOLUTION: A visual field and a measuring position which are used to measure the film thickness of the transparent film being worked are measured by an area which is not influenced by the distribution of the film thickness of an CMP-worked actual device pattern. A comparatively flat region is specified on the basis of the reflected light intensity, the frequency spectrum intensity or the like in a feature amount of spectral reflected light from the transparent film, the film thickness is measured, and the film thickness is controlled with high accuracy. Consequently, a flattening working operation in a CMP working process based on the distribution of the film thickness can be optimized, a film formation condition to a film formation process and a working condition in an etching process can be optimized, and the semiconductor device is manufactured with high accuracy. |
