METHOD FOR FORMING STORAGE ELECTRODE IN SEMICONDUCTOR CAPACITOR

摘要

PURPOSE: A method for forming a storage electrode in a semiconductor capacitor is provided to improve processing margins of MPS(Meta-stable Poly Silicon) growth by using step difference between a storage node oxide and silicon layer. CONSTITUTION: A storage node oxide layer(10) is formed on an insulating layer(6) having a contact plug(8). An amorphous silicon layer(12) as a storage node is deposited on the resultant structure. The amorphous silicon layer(12) is polished to expose the storage node oxide layer(10) by using a slurry composed of silica polishing agents and chemicals for etching amorphous silicon, wherein the polishing selectivity between the amorphous silicon layer(12) and the storage node oxide layer(10) is 2-5 : 1, thereby forming a step difference(t). Then, an MPS is grown on the amorphous silicon layer(12) so as to form a storage electrode.