发明名称 |
Method and structure for high capacitance memory cells |
摘要 |
A method and structure for high capacitance memory cells is provided. The method includes forming a trench capacitor in a semiconductor substrate. A self-structured mask is formed on the interior surface of the trench. The interior surface of the trench is etched to form an array of silicon pillars. The self-structured mask is removed. Then an insulator layer is formed on the array of silicon pillars. A polycrystalline semiconductor plate extends outwardly from the insulator layer in the trench.
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申请公布号 |
US6518615(B1) |
申请公布日期 |
2003.02.11 |
申请号 |
US19980137896 |
申请日期 |
1998.08.20 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
GEUSIC JOSEPH E.;FORBES LEONARD;AHN KIE Y. |
分类号 |
H01L21/8242;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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