| 摘要 |
PROBLEM TO BE SOLVED: To sure reduce stresses which are received by a semiconductor layer from a base material substrate, on which the semiconductor layer is grown, and at the same time, to make the base material substrate easily separable from the semiconductor layer. SOLUTION: On a sapphire base material substrate 11, an n-type GaN contact layer 12, having a thickness of about 5 μm, is grown. Then a thermally decomposed layer 12a, resulting from the thermal decomposition of the contact layer 12, is formed so as to disjoin the contact layer 12 from the substrate 11, by once taking out the substrate 11 from a reaction furnace and irradiating the contact layer 80 with a laser beam 80 from the substrate 11 side. In addition, an epitaxial layer containing a light-emitting layer 14 is grown on the contact layer 12, while the layer 12 is stuck to the substrate 11. Moreover, the base material substrate 11 is separated and removed from the epitaxial layer, by removing the thermally decomposed layer 12a with hydrochloric acid. |
