| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile memory device having a multi-banks which is a plurality of memory banks and in which parallel write-in operation and parallel erasing operation can be performed. SOLUTION: This device has a plurality of memory banks (3, 4) which is provided with a non-volatile memory cell and which can perform memory operation independently, and a control section (5) controlling memory operation of the memory bank. The control section can control interleave operation in which memory operation is started responding to operation instruction specifying the other memory bank even in memory operation responding to operation instruction specifying one memory bank, and parallel operation in which when memory operation specifying successively the other memory bank is instructed before memory operation responding to operation instruction specifying one memory bank is started, memory operation of both memory banks are started in parallel. Status registers (6, 7) are provided for each memory bank, a status of memory operation is reflected to a corresponding status register for each memory bank.</p> |
