Reference voltage generator

摘要

A reference voltage generator to operate under the supply voltage of 1V or less is provided. In order to output a reference voltage, the change as caused by the ambient temperature of the forward bias voltage of any one of the plural Schottky diodes is compensated with the difference in the forward bias voltage between said plural Schottky diodes. The semiconductor region corresponding to the Schottky contact interface is formed in the same process as for an N well region corresponding to the channel region of the PMOS transistor or for a P well region corresponding to the channel region of the NMOS transistor and the metallic region thereof corresponding to the Schottky contact interface is formed in the same process as for the silicide region comprising the contact region of the MOS transistor.