发明名称 |
Non-volatile semiconductor memory device |
摘要 |
A non-volatile semiconductor memory device having a memory cell array region in which a plurality of memory cells, each having first and second MONOS memory cells controlled by a word gate and control gates, are arranged in first and second directions. The memory cell array region has a plurality of sector regions divided in the second direction. Each of a plurality of control gate drivers is capable of setting a potential of first and second control gates in the corresponding sector region independently of other sector regions. A plurality of switching elements which select connection/disconnection are formed at connections between a plurality of main bit lines and a plurality of sub bit lines.
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申请公布号 |
US2003025150(A1) |
申请公布日期 |
2003.02.06 |
申请号 |
US20020197643 |
申请日期 |
2002.07.18 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KANAI MASAHIRO;KAMEI TERUHIKO |
分类号 |
G11C16/02;G11C16/04;G11C16/06;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/788;H01L31/062;H01L31/113 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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