发明名称 Semiconductor module including semiconductor memory device shiftable to test mode as well as semiconductor memory device used therein
摘要 A semiconductor module includes a plurality of semiconductor memory devices, a registered buffer, a PLL circuit and a test mode entry circuit. The test mode entry circuit receives a signal MRS, a bank address signal and an address signal from the registered buffer, directly and externally receives a signal formed of a high voltage level higher than the voltage level in a normal operating range, generates a deactivating signal for deactivating the PLL circuit and a test mode shift signal formed of the high voltage level, applying the deactivating signal to the PLL circuit, and applying the test mode shift signal to the plurality of semiconductor memory devices. Consequently, the plurality of semiconductor memory devices included in the module can be shifted to the test mode in the modular state.
申请公布号 US2003026139(A1) 申请公布日期 2003.02.06
申请号 US20020120574 申请日期 2002.04.12
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 ENDOU SHUNSUKE;MIYAMOTO TAKAYUKI;NAKAI JUN
分类号 G01R31/28;G01R31/3185;G06F12/16;G11C7/22;G11C11/401;G11C11/4076;G11C29/14;G11C29/46;(IPC1-7):G11C7/00 主分类号 G01R31/28
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