| 摘要 |
<p>The present invention is related to a method of producing nanometer silicon carbide material. The method comprises using trade nanometer-, micron-SiC, or various shapes (for example, block, etc) and size of SiC as raw material, adding catalyzer, pre-vacumming, passing inert gases as protective atmosphere, and then heating to 1300-2000°C and holding this temperature for determinated time. The obtained nanometer silicon carbide material, such as nanometer bar or nanometer linear silicon carbide, will advantage to develop related photoelectricity parts of silicon carbide, especially nanometer photoelectricity parts and field-emitting cathode electron source. The method is excellent in simple process, cheap raw material and high productivity.</p> |
