发明名称 Reduction of metal corrosion in semiconductor devices
摘要 Reducing metal corrosion, such as copper corrosion, in semiconductor devices, is disclosed. A semiconductor device includes an insulating layer, a metal line, one or more corrosive metal components, and one or more sacrificial corrosive metal components. The metal line is situated within the insulating layer. The one or more corrosive metal components are situated within the insulating layer and connected to the metal line. The one or more sacrificial corrosive metal components are situated within the insulating layer and connected to the metal line. The presence of the sacrificial components substantially reduces corrosion of the non-sacrificial components.
申请公布号 US6515366(B1) 申请公布日期 2003.02.04
申请号 US20020077071 申请日期 2002.02.14
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHIOU WEN-CHIH;SHIH TSU
分类号 H01L21/768;H01L23/26;H01L23/532;(IPC1-7):H01L29/80 主分类号 H01L21/768
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