发明名称 MANUFACTURING METHOD OF ELECTRON SOURCE AND ELECTRON SOURCE MANUFACTURED BY ITS METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a manufacturing method of an electron source in which the emission start field intensity and the device drive voltage of the electron source can be reduced, and an electron source obtained by this manufacturing method. SOLUTION: This is a manufacturing method that comprises at least a process of forming an aluminum oxide film on anode on an substrate and a process in which a carbon system material is piled in close contact on nearly the bottom part of the pores of the above aluminum oxide film on anode by employing the hydrocarbon as a material gas and by vapor-phase carbonization method at less than the decomposition temperature of the material gas, and further, a fibrous carbon system material is formed inside the pores. Preferably, the process of piling the above carbon system material is to be a vapor-phase carbonization method using propylene as the material gas and in the temperature range 500-750 deg.C.</p>
申请公布号 JP2003031115(A) 申请公布日期 2003.01.31
申请号 JP20010214806 申请日期 2001.07.16
申请人 SHARP CORP 发明人 TSUNESADA NORIMOTO;OKI HIROSHI;URAYAMA MASAO;TOMITA AKIRA;KYOTANI TAKASHI;MATSUI KEITARO
分类号 C01B31/02;C23C16/26;D01F9/127;H01J1/304;H01J9/02;(IPC1-7):H01J9/02 主分类号 C01B31/02
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