| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element, having two stepwise shapes which will not cause complication of processes. SOLUTION: The method for manufacturing the semiconductor element comprises the steps of etching a semiconductor substrate to a depth of a first stage with a first resist formed into a desired shape as an etching mask on the substrate, coating a first protective film on the etched substrate, etching the exposed first protective film and the substrate to a depth of a second stage with a second resist which is formed to cover a position desired to finish the etching to the depth of the first stage as an etching mask, and coating the second protective film on the retained second resist or the like. The method further comprises the steps of lifting off the first and second protective films formed on the first and second resist masks, by using the first and second resist masks, exposing the surface of the substrate, in which the first and second protective films are formed, and forming electrodes over the entire surface.
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