| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser using a nitride semiconductor capable of easily raising the output and to provide a method for manufacturing the same. SOLUTION: The semiconductor laser comprises a P-type side ohmic electrode 52 brought into ohmic contact with a P-type contact layer 43 in other region except at least one end of a resonator direction A, and a P-type side Schottky electrode 53 brought into Schottky contact with the layer 43 at its end. Thus, at least one end of the direction A is set to a current non-implanting region, a surface area of the electrode 53 is increased, and a contact resistance with the wirings can be decreased. Further, heat generated particularly near resonator end faces 10a, 10b of an active layer 30 can be efficiently radiated. The width of the ends in the resonator direction in which the layer 43 is brought into contact with the electrode 53 is preferred to be 50μm or less.
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