| 摘要 |
PURPOSE:To enable to form a periodic structure of a large area without necessity of an accurate optical system by forming a recess by anisotropically etching the surface of a substrate, forming and selectively removing a film for etching mask of the surface of the substrate, buring an etching film only in the recess, and then sequentially forming periodic recesses by etching. CONSTITUTION:A resist pattern 16 is formed on a substrate formed of an waveguide layer 12, a light emitting layer 13, a clad layer 14 and a substrate 15, and a periodic recess 17 is formed by anisotropic etching. Then, the resist 16 is removed, a masking film 18 is formed, dry etched to form a mask 19, and a periodic recess 20 is obtained by anisotropic etching. Then, the mask 19 is removed, a new masking film 22 is coated on the structure 21 made of the recesses 17, 20, a periodic structure 26 formed of periodic recesses 24, 25 is formed, a P type InP clad layer 27, a P type InGaAsP contacting layer 28 are eventually grown to obtain a laser structure. |
