发明名称 |
Method of forming contacts for a bit line and a storage node in a semiconductor device |
摘要 |
A method of forming self-aligned contact holes in an oxide layer to expose a semiconductor substrate between adjacent gate lines. The gate lines are formed such that a spacing between adjacent gate lines in the storage node contact region is equal to or greater than a spacing between adjacent gate lines in the bit line contact region. An insulating layer is deposited on the gate line to fill spaces between the gate lines. Self-aligned contact holes are formed in the insulating layer, using a photolithographic process. As a result, storage node contact hole not-opening phenomenon and bit line contact shoulder over-etching phenomenon can be avoided.
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申请公布号 |
US2003022514(A1) |
申请公布日期 |
2003.01.30 |
申请号 |
US20020256438 |
申请日期 |
2002.09.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YOUNG-WOO;LEE WON-SUNG |
分类号 |
H01L27/10;H01L21/302;H01L21/461;H01L21/60;H01L21/8242;H01L23/485;H01L27/02;(IPC1-7):H01L21/461 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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