发明名称 |
Semiconductor device and its manufacturing method |
摘要 |
The present invention provides a MISFET with a replacement gate electrode, which ensures large ON-current. A semiconductor device, in which on the substrate, first and second field effect transistors are formed, the first field effect transistor is a replacement gate type field effect transistor, and the length of the overlap between a gate electrode and a source/drain diffusion zone of the first field effect transistor correspond to that between a gate electrode and a source/drain diffusion zone of the second field effect transistor.
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申请公布号 |
US2003022422(A1) |
申请公布日期 |
2003.01.30 |
申请号 |
US20020081227 |
申请日期 |
2002.02.25 |
申请人 |
TORII KAZUYOSHI;TSUCHIYA RYUTA;HORIUCHI MASATADA;ONAI TAKAHIRO |
发明人 |
TORII KAZUYOSHI;TSUCHIYA RYUTA;HORIUCHI MASATADA;ONAI TAKAHIRO |
分类号 |
H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L27/092;H01L29/423;H01L29/43;H01L29/49;H01L29/78;(IPC1-7):H01L21/338 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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