SEMICONDUCTOR MANUFACTURING DEVICE, AND CLEANING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To effectively remove a ruthenium film, an osmium film, and oxides thereof deposited or adhered inside a semiconductor treatment device. SOLUTION: Reaction products deposited or adhered inside the device are rapidly and effectively removed by individually using an oxygen atom donating gas and a halogen gas and feeding the gases inside the device. The device can be stably operated, a thin film of high quality can be formed, and a semiconductor element can be produced in high yield.