| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device such as a thin film transistor(TFT) whose characteristics and reliability are excellent. SOLUTION: This thin film transistor is provided with a semiconductor film, gate insulating film, and gate electrode formed on an insulating substrate; an inter-layer insulating film formed on the semiconductor film, gate insulating film; and gate electrode, and an electrode formed on the inter-layer insulating film. The surface of the inter-layer insulating film is ground. In this case, a silicon oxide film is mechanically ground so that the flatness of the surface can be realized.</p> |
