| 摘要 |
PURPOSE: To provide a nonvolatile semiconductor memory device and a method for manufacturing the same capable of sufficiently securing an overlapping area between a floating gate electrode and a control gate electrode without increasing a maximum film thick region of the floating gate electrode. CONSTITUTION: The floating gate electrode comprises three layered structure by a first, a second, and a third electrode, 3, 7, and 9. A position of a bottom face of the second floating gate electrode 7 can be arranged higher than a position of a top face of the first floating gate electrode 3, by setting up a step section on a first inter layer insulation film surrounding the first floating gate electrode 3. As a result, the overlapping area can be increased relative to the step section arranged on the first interlayer insulation film, comparing to an overlapping area between the floating gate electrode and the control gate electrode of the conventional nonvolatile semiconductor memory device. The film thickness of the floating gate electrode is no so increased as that in the conventional structure.
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