发明名称 High-voltage semiconductor device used as switching element or the like
摘要 A semiconductor device has a first-conductivity-type semiconductor region, second-conductivity-type semiconductor region, and a high-resistance region. The first-conductivity-type semiconductor region is formed on a first-conductivity-type semiconductor body and has an electric resistance higher than that of the first-conductivity-type semiconductor body. The second-conductivity-type semiconductor region is formed on the first-conductivity-type semiconductor region. The high-resistance region is in contact with the first-conductivity-type and second-conductivity-type semiconductor regions and extends from the upper surface of the second-conductivity-type semiconductor region in the direction of the first-conductivity-type semiconductor body.
申请公布号 US2003015771(A1) 申请公布日期 2003.01.23
申请号 US20020195360 申请日期 2002.07.16
申请人 NAKAGAWA AKIO;KAWAGUCHI YUSUKE 发明人 NAKAGAWA AKIO;KAWAGUCHI YUSUKE
分类号 H01L29/40;H01L29/78;H01L29/861;(IPC1-7):H01L31/105 主分类号 H01L29/40
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