Method and system for monitoring a semiconductor device manufacturing process

摘要

To realize a method for detecting variations in conditions (drift of the exposure and drift of the focus) in an exposure equipment at a product wafer level in the lithography process, the present invention specifies the process in such a way that calculation results of feature quantities such as electron beam images, line profiles, dimensions, etc. under various sets of the exposure and the focus have been stored as a library, and an electron beam image of the product wafer is compared with these pieces of data in the library so that detection of drifts of the exposure and the focus and check of the results on the screen can easily be performed.