发明名称 METHOD FOR PRODUCING LAYERED STRUCTURES ON A SUBSTRATE, SUBSTRATE AND SEMICONDUCTOR COMPONENTS PRODUCED ACCORDING TO SAID METHOD
摘要 The invention relates to a method of manufacturing layer-like structures in which a material layer having hollow cavities, preferably a porous material layer, is produced on or out of a substrate consisting, for example, of monocrystalline p-type or n-type Si and in which the layer-like structure, or a part of it, is subsequently provided on the cavity exhibiting or porous material layer. The layer-like structure, or a part of it, is subsequently separated from the substrate using the layer having the hollow cavities, or porous layer, as a point of desired separation, for example through the production of a mechanical strain within or at a boundary surface of the cavity exhibiting or porous layer. The method is characterised in that the surface of the substrate is structured prior to the production of the porous layer, or in that the surface of the porous layer is structured.
申请公布号 US2003017712(A1) 申请公布日期 2003.01.23
申请号 US20000447000 申请日期 2000.04.07
申请人 BRENDEL ROLF 发明人 BRENDEL ROLF
分类号 B01J19/08;C30B29/06;C30B29/66;H01L21/20;H01L21/304;H01L21/306;H01L21/762;H01L31/0236;H01L31/04;H01L31/052;H01L31/068;H01L31/18;(IPC1-7):H01L21/76;H01L21/31;H01L21/469;H01L21/30;H01L21/46 主分类号 B01J19/08
代理机构 代理人
主权项
地址