SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACT AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device having a self-aligned contact and a method for fabricating the same are provided to prevent etch damages due to a high thermal oxide layer and a low thermal oxide layer by forming the high thermal oxide layer prior to the low thermal oxide layer. CONSTITUTION: A self-aligned contact region(101) and a non-self-aligned contact region(102) are defined on a semiconductor substrate(100). The first insulating layer(103) is formed on the semiconductor substrate(100). A plurality of conductive layer patterns are formed on the first insulating layer(103). The second insulating layer(106), the third insulating layer(107), and the fourth insulating layer are sequentially formed on the first insulating layer(103) including the conductive layer patterns. A spacer(109) is formed at a sidewall of the conductive layer patterns by etching the fourth insulating layer. An etch stop layer(110) and an interlayer dielectric(111) are formed on the semiconductor substrate(100). The interlayer dielectric(111) is etched by using the etch stop layer(110). A self-aligned contact(112) is formed by etching the fifth insulating layer.