发明名称 TFT-LCD formed with four masking steps
摘要 The present invention discloses a structure of a TFT-LCD and its forming process in order to reduce the number of masking steps for manufacturing the tri-layer structure of a TFT-LCD, and further provides a process for forming a TFT-LCD with four masking steps. In addition, the forming processes of a storage capacitor, a wiring pad and an electrostatic discharge structure are performed simultaneously with the forming process of a TFT-LCD.
申请公布号 US6509614(B1) 申请公布日期 2003.01.21
申请号 US20020073795 申请日期 2002.02.11
申请人 HANNSTAR DISPLAY CORP. 发明人 SHIH HSUEH-FENG
分类号 H01L21/336;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L27/01 主分类号 H01L21/336
代理机构 代理人
主权项
地址