发明名称 |
PROCESS FOR PRODUCING SEMICONDUCTOR ARTICLE |
摘要 |
A novel process for producing a semiconductor article is disclosed which comprises steps of preparing a first substrate constituted of a silicon substrate, a nonporous semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate and the nonporous semiconductor layer; bonding the first substrate to a second substrate to obtain a multiple layer structure with the nonporous semiconductor layer placed inside; separating the multiple layer structure at the ion implantation layer; and removing the ion implantation layer remaining on the separated second substrate.
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申请公布号 |
CA2221100(C) |
申请公布日期 |
2003.01.21 |
申请号 |
CA19972221100 |
申请日期 |
1997.11.14 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YONEHARA, TAKAO;SAKAGUCHI, KIYOFUMI |
分类号 |
H01L21/304;H01L21/322;H01L21/762;(IPC1-7):H01L21/20;H01L21/265 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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