发明名称 |
Semiconductor device |
摘要 |
High-speed and low-power-consuming transistors such as field effect transistors having strained Si channels and hetero-bipolar transistors are integrated with each other. Used here is a complex structure in which an MOSFET having a thin-film SiGe buffer layer and a strained Si channel are laminated on an insulating film and an HBT having an SiGe base layer formed on a thin-film SiGe layer by epitaxial growth and an Si emitter layer formed on the SiGe base layer are combined with each other. The thin-film SiGe layer formed on the insulating film of the MOSFET is made thinner than the counterpart of the HBT. The thin-film SiGe layer formed on the insulating film of the MOSFET has Ge concentration higher than that of the counterpart of the HBT.
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申请公布号 |
US6509587(B2) |
申请公布日期 |
2003.01.21 |
申请号 |
US20010955144 |
申请日期 |
2001.09.19 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGIYAMA NAOHARU;TEZUKA TSUTOMU;MIZUNO TOMOHISA;TAKAGI SHINICHI |
分类号 |
H01L29/73;H01L21/02;H01L21/331;H01L21/76;H01L21/8222;H01L21/8248;H01L21/8249;H01L21/84;H01L27/06;H01L27/12;H01L29/165;H01L29/737;H01L29/786;(IPC1-7):H01L35/032;H01L31/117;H01L31/039 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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