| 摘要 |
PROBLEM TO BE SOLVED: To form a diffusion barrier provided with both of diffusion preventing performance to copper and adherence between with a layer insulation film and copper. SOLUTION: On a semiconductor substrate 11, an insulation film 12, a silicon nitride/oxide film and a silicon oxide film 14 are formed and wiring grooves 15 are formed. A Tan film 16 is formed at the grooves 15 and a Cu film 17 is formed in addition. Next, the film 14 and the film 16 are made to react thermally to form a TaSiN film 18. Next, a Cu film 17 on the film 13 is polished, to form a Cu-wiring layer 17a. By forming the TaSiN film through heat treatment, adhesion of the silicon oxide film and the Tan film is improved, and peeling off of films is prevented.
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