发明名称 |
Capacitor with high dielectric constant materials |
摘要 |
A stabilized capacitor using non-oxide electrodes and high dielectric constant oxide dielectric materials and methods of making such capacitors and their incorporation into DRAM cells is provided. A preferred method includes providing a non-oxide electrode, oxidizing an upper surface of the non-oxide electrode, depositing a high dielectric constant oxide dielectric material on the oxidized surface of the non-oxide electrode, and depositing an upper layer electrode on the high dielectric constant oxide dielectric material.
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申请公布号 |
US2003011015(A1) |
申请公布日期 |
2003.01.16 |
申请号 |
US20020115340 |
申请日期 |
2002.04.02 |
申请人 |
BASCERI CEM;SANDHU GURTEJ S.;YANG SAM |
发明人 |
BASCERI CEM;SANDHU GURTEJ S.;YANG SAM |
分类号 |
H01L21/02;H01L21/316;H01L27/108;(IPC1-7):H01L29/94 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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