发明名称 |
Non-volatile semiconductor memory device for selectively re-checking word lines |
摘要 |
A method for settling threshold voltages of word lines on a predetermined level in an erasing processing of a non-volatile semiconductor memory device so as to speed up the erasing processing. A word latch circuit is provided for each word line and the threshold voltage of each memory cell is managed for each word line in a selected memory block. Each word latch circuit is shared by a plurality of word lines so as to reduce the required chip area. A rewriting voltage is set for each finished non-volatile memory and the voltage information is stored in the boot area of the non-volatile memory, so that the voltage is recognized by the system each time the system is powered.
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申请公布号 |
US2003012052(A1) |
申请公布日期 |
2003.01.16 |
申请号 |
US20020223488 |
申请日期 |
2002.08.20 |
申请人 |
HITACHI, LTD. AND HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
MATSUZAKI NOZOMU;SHIBA KAZUYOSHI;TANIGUCHI YASUHIRO;TANAKA TOSHIHIRO;SHINAGAWA YUTAKA |
分类号 |
G11C16/06;G11C8/08;G11C16/02;G11C16/12;G11C16/34;(IPC1-7):G11C11/34 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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