发明名称 |
FIELD−EFFECT TRANSISTOR CONSTITUTING CHANNEL BY CARBON NANO TUBES |
摘要 |
A field−effect transistor including a channel arranged on a substrate, a source electrode connected to the starting end of the channel, a drain electrode connected to the terminating end of the channel, an insulator arranged on the top or side of the channel, and a gate electrode arranged via the insulator on the top or side of the channel, wherein the channel is composed of a plurality of carbon nano tubes.
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申请公布号 |
WO03005451(A1) |
申请公布日期 |
2003.01.16 |
申请号 |
WO2002JP06355 |
申请日期 |
2002.06.25 |
申请人 |
NEC CORPORATION;NIHEY, FUMIYUKI |
发明人 |
NIHEY, FUMIYUKI |
分类号 |
H01L29/06;H01L21/338;H01L29/76;H01L29/78;H01L29/786;H01L29/812;H01L51/00;H01L51/05;H01L51/30;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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