发明名称 FIELD−EFFECT TRANSISTOR CONSTITUTING CHANNEL BY CARBON NANO TUBES
摘要 A field−effect transistor including a channel arranged on a substrate, a source electrode connected to the starting end of the channel, a drain electrode connected to the terminating end of the channel, an insulator arranged on the top or side of the channel, and a gate electrode arranged via the insulator on the top or side of the channel, wherein the channel is composed of a plurality of carbon nano tubes.
申请公布号 WO03005451(A1) 申请公布日期 2003.01.16
申请号 WO2002JP06355 申请日期 2002.06.25
申请人 NEC CORPORATION;NIHEY, FUMIYUKI 发明人 NIHEY, FUMIYUKI
分类号 H01L29/06;H01L21/338;H01L29/76;H01L29/78;H01L29/786;H01L29/812;H01L51/00;H01L51/05;H01L51/30;(IPC1-7):H01L29/78 主分类号 H01L29/06
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