UNI-TRANSISTOR MAGNETIC RANDOM ACCESS MEMORY DEVICE

摘要

PURPOSE: A magnetic random access memory device is provided to read a current value flowing through a channel of a transistor whose gate consists of a tunnelling magneto resistive, instead of reading a resistive value of a tunnelling magneto resistive device. CONSTITUTION: A source(S) and a drain(D) are conductive impurity layers and are spaced apart. The source(S) and the drain(D) are used as the first bit line(B1) and the second bit line(B2), respectively. The first insulation layer(22) is formed on the source(S), the drain(D) and a substrate(20). An antiferromagnetic layer(32), a junction layer(34) and a ferromagnetic layer(36) are stacked on the first insulation layer(22) in this order. The stacked pattern constitutes a tunnelling magneto resistive(TMR)(30). The second insulation layer(24) is formed on the first insulation layer(22) so as to surround the TMR(30). As a gate, a word line is formed on the second insulation layer(24) so as to cross the first and second bit lines(B1, B2).