发明名称 |
System and method for the real time determination of the in situ emissivity of a workpiece during processing |
摘要 |
<p>A system (10) and method for determining the reflectivity of a workpiece (W) during processing in a heating chamber (74) of a thermal processing apparatus (22). The system first determines directly the reflectivity of the workpiece outside of the heating chamber (74) of the thermal processing apparatus, and then determines the reflectivity of the workpiece during processing within the heating chamber (74) of the thermal processing apparatus (22) by correlating the ex situ wafer reflectivity with the intensity of the radiation reflected from the wafer within the heating chamber. <IMAGE></p> |
申请公布号 |
EP1041619(A3) |
申请公布日期 |
2003.01.15 |
申请号 |
EP20000302508 |
申请日期 |
2000.03.28 |
申请人 |
AXCELIS TECHNOLOGIES, INC. |
发明人 |
HEBB, JEFFREY PAUL;SHAJII, ALI |
分类号 |
G01J5/00;G01J5/02;G01J5/10;H01L21/205;H01L21/26;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
G01J5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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