| 摘要 |
PURPOSE: To coat a protective oxide film on a floating gate electrode and to simultaneously suppress a formation of bird's beak directly under a gate electrode of a MOS transistor for constituting a logic element in a semiconductor integrated circuit device having a flash memory unit. CONSTITUTION: A method for manufacturing the semiconductor integrated circuit device comprises steps of uniformly depositing an amorphous silicon film on a substrate in which a memory cell region and an element region are formed, patterning the amorphous silicon film on the memory cell region while the amorphous silicon film remains coating on the element region on the substrate, and forming a laminated gate electrode or a single layer gate of the flash memory unit. The method further comprises steps of forming the protective oxide film in this state by a thermal oxidation treating step, thereafter patterning the amorphous silicon film, and forming the gate electrode on the element region.
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