发明名称 SUBSTRATE TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To make possible both of the use of a wafer transfer unit using one boat and the use of the wafer transfer unit using two boats in a batch system CVD device. SOLUTION: A batch type CVD device 1 has a boat 21 and comes in a treating chamber within a process tube or comes out from the treating chamber within the process tube to hold a plurality of sheets of wafers W. A wafer transfer unit 40 loads the wafers W into the boat 21 or deloads the wafers W from the boat 21 on the outside of the treating chamber. The unit 40 loads or deloads the wafers W on a heat-treating stage 4 right under the process tube and a loading and deloading stage 6, on which the boat 21 is placed, located at a position apart from the stage 4. At the time of the use of the unit 40 using two boats, the unit 40 loads the wafers W into the boats 21 on the stage 6 and transfers the boats 21 subsequent to the loading to the stage 4. At the time of the use of the unit 40 using one boat, the unit 40 loads the wafers W into the one boat 21 on the stage 4. As a result, by making both uses possible, the value of the batch type CVD device can be enhanced.
申请公布号 JP2003007796(A) 申请公布日期 2003.01.10
申请号 JP20010185321 申请日期 2001.06.19
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YANAGAWA HIDEHIRO;KOTAKE SHIGERU;MATSUNAGA TATSUHISA
分类号 C23C16/44;H01L21/205;H01L21/22;H01L21/31;H01L21/677;H01L21/68;(IPC1-7):H01L21/68 主分类号 C23C16/44
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