| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which realizes a high-performance, high-functional and miniaturized product by making fine a high withstanding voltage circuit operative at high voltages, and mounting such fine high withstand ing voltage circuit mixed with low withstanding voltage circuits on the same chip, and realize a semiconductor device manufacturing method which realizes such semiconductor device by a simple way, without increasing the manufactur ing cost. SOLUTION: The semiconductor device comprises a gate electrode 9 formed via a first gate insulation film 5 on a semiconductor substrate 1, low concentration impurity regions 16 formed on the sides and bottoms of trenches 11 cut down into the substrate 1 on both sides of the gate electrode 9, sidewall spacers 12 formed on the sidewall of the gate electrode 9 and the sides of the trenches, and high concentration impurity regions 17 formed in self-alignment on the bottoms of the trenches against the sidewall spacers 12.
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