| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a capacitor in a semiconductor device, which has excellent electrical characteristics and little damage by using Cl group, in a forming method of a capacitor having a dielectric film including Ta element such as TaON or Ta2 O5 . SOLUTION: This method for forming a capacitor in a semiconductor device comprises a process for forming a lower electrode of the capacitor in the upper part of a substrate, a process for forming a dielectric film including Ta on the lower electrode, a process for forming a nitride layer on the surface of the dielectric film by performing a nitrogen plasma treatment on the dielectric film, and a process for forming an upper electrode of the capacitor by evaporating a second TiN by an LPCVD method on a first TiN film which is evaporated on the dielectric film by a PECVD method. |
