| 摘要 |
PURPOSE: A DRAM cell and a method for manufacturing the same are provided to improve driving force of the device by forming a word line under an active region, perform easily post-planarization and increase of alignment tolerance, and remove data sensing margin generating coupling capacitance between a bit line and a word line. CONSTITUTION: A first interlayer dielectric(39) is formed on a semiconductor substrate(41). A second silicon layer(35) of SOI substrate comprising a transistor(37) is formed on the first interlayer dielectric. A second interlayer dielectric(45) comprised of a first storage node contact hole and a bit line contact hole is formed on the first interlayer dielectric(39). A plug(49) is buried in the holes. A bit line(51) comprised of a nitride spacer(53) is formed on the plug. A third interlayer dielectric(55) comprised of a second storage node contact hole is formed on the bit line. A capacitor is formed on the third interlayer dielectric.
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