发明名称 |
Nonvolatile nor semiconductor memory device and method for programming the memory device |
摘要 |
A nonvolatile NOR semiconductor memory device and a method for programming the memory device are described. The memory device has a multiplicity of one-transistor memory cells disposed in a matrix form being driven both via word lines and via bit lines. In this case, each one-transistor memory cell has both a source line and a drain line, as a result of which selective driving of the respective drain and source regions is obtained. In this way, a leakage current in the semiconductor memory device can be optimally reduced with minimal space requirement.
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申请公布号 |
US2003007386(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US20020177884 |
申请日期 |
2002.06.20 |
申请人 |
GEORGAKOS GEORG;HUCKELS KAI;KRIZ JAKOB;KUTTER CHRISTOPH;LIEBELT ANDREAS;LUDWIG CHRISTOPH;KAMIENSKI ELARD STEIN VON;WAWER PETER |
发明人 |
GEORGAKOS GEORG;HUCKELS KAI;KRIZ JAKOB;KUTTER CHRISTOPH;LIEBELT ANDREAS;LUDWIG CHRISTOPH;KAMIENSKI ELARD STEIN VON;WAWER PETER |
分类号 |
G11C16/04;H01L27/115;(IPC1-7):G11C11/34 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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