| 摘要 |
<p>After a hydrogen high-concentration layer having a concentration peak at a position at least 5 μm deep from a main surface is formed in a depth-direction hydrogen concentration profile by implanting hydrogen minus ions into a semiconductor crystal substrate from the main surface thereof, a semiconductor thin film is separated from the semiconductor crystal substrate in the hydrogen high-concentration layer. Accordingly, a method of producing a semiconductor thin film is provided that can produce with high yield and efficiency a semiconductor thin film which is thicker than a lower-limit value by a conventional smart-cut method and therefore is suitable for a solar cell or the like.</p> |
