| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PROCESS FOR MANUFACTURING |
| 摘要 |
In a peripheral circuit region of a DRAM, two connection holes 17a, 17b for connecting a first layer line 14 and a second layer line 26 electrically are opened separately in two processes. After forming the connection holes 17a and 17b, plugs 18a and 215a are formed in the connection holes 17a and 17b, respectively.
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| 申请公布号 |
US2003006441(A1) |
申请公布日期 |
2003.01.09 |
| 申请号 |
US19980208879 |
申请日期 |
1998.12.10 |
| 申请人 |
NAKAMURA YOSHITAKA;ASANO ISAMU;KAWAKITA KEIZOU;YAMADA SATORU |
发明人 |
NAKAMURA YOSHITAKA;ASANO ISAMU;KAWAKITA KEIZOU;YAMADA SATORU |
| 分类号 |
H01L21/768;H01L21/8242;H01L23/522;H01L27/108;(IPC1-7):H01L31/119;H01L29/76;H01L21/824 |
主分类号 |
H01L21/768 |
| 代理机构 |
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代理人 |
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