发明名称 SOURCE FOLLOWER DEVICE FOR HIGH SPEED OPERATION
摘要 PURPOSE: A source follower device for a high speed operation is provided, which enables a high speed operation by removing a slew rate limit by controlling a drain current actively by forming a negative feedback loop. CONSTITUTION: The first transistor(M1) receives an input voltage through a gate port, and the second transistor(M2) receives a bias voltage through a gate port. The third and the fourth transistor(M3,M4) are connected between a power supply voltage(VDD) and drain ports of the first and the second transistor respectively and are constituted in a current mirror method. The fifth and the sixth transistor(M5,M6) are connected between source ports of the first and the second transistor and a ground port(Vss) and are constituted in a current mirror method. A load capacitor(CL) is connected between the ground port and a common contact point of the first and the fifth transistor. An output voltage is output from the common contact point of the first and the fifth transistor.
申请公布号 KR20030002122(A) 申请公布日期 2003.01.08
申请号 KR20010038863 申请日期 2001.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 AHN, GI UNG
分类号 H03K19/0175;(IPC1-7):H03K19/017 主分类号 H03K19/0175
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