发明名称 METHOD FOR FABRICATING LOWER ELECTRODE OF CAPACITOR BY ELECTROPLATING METHOD
摘要 PURPOSE: A method for fabricating a lower electrode of capacitor by an electroplating method is provided to prevent devices from being short-circuited and an electrical characteristic from being deteriorated by easily eliminating the byproduct generated by forming the lower electrode of capacitor made of noble metal. CONSTITUTION: An etch barrier layer(23) and a lower electrode seed layer(24) are sequentially formed on a substrate(20). The lower electrode(26) is formed in a predetermined region on the seed layer by using an electroplating method. A sacrificial layer of a spacer type is formed on the sidewall of the lower electrode. The seed layer on a peripheral region of the lower electrode is eliminated. The sacrificial layer is removed.
申请公布号 KR20030001601(A) 申请公布日期 2003.01.08
申请号 KR20010036378 申请日期 2001.06.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KWON, IL YEONG
分类号 H01L27/04;(IPC1-7):H01L27/04 主分类号 H01L27/04
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