发明名称 |
METHOD FOR FABRICATING LOWER ELECTRODE OF CAPACITOR BY ELECTROPLATING METHOD |
摘要 |
PURPOSE: A method for fabricating a lower electrode of capacitor by an electroplating method is provided to prevent devices from being short-circuited and an electrical characteristic from being deteriorated by easily eliminating the byproduct generated by forming the lower electrode of capacitor made of noble metal. CONSTITUTION: An etch barrier layer(23) and a lower electrode seed layer(24) are sequentially formed on a substrate(20). The lower electrode(26) is formed in a predetermined region on the seed layer by using an electroplating method. A sacrificial layer of a spacer type is formed on the sidewall of the lower electrode. The seed layer on a peripheral region of the lower electrode is eliminated. The sacrificial layer is removed.
|
申请公布号 |
KR20030001601(A) |
申请公布日期 |
2003.01.08 |
申请号 |
KR20010036378 |
申请日期 |
2001.06.25 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KWON, IL YEONG |
分类号 |
H01L27/04;(IPC1-7):H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|