| 摘要 |
High quality epitaxial layers of monocrystalline materials are grown overlying multiple sides of a monocrystalline substrate such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layers comprises layers of monocrystalline oxide spaced apart from the silicon wafer by amorphous interface layers of silicon oxide. The amorphous interface layers dissipate strain and permit the growth of high quality monocrystalline oxide accommodating buffer layers. The accommodating buffer layers are lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layers. Any lattice mismatch between the accommodating buffer layers and the underlying silicon substrate is taken care of by the amorphous interface layers. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. |
