| 摘要 |
PURPOSE: An apparatus for generating a high voltage in a semiconductor memory device is provided to improve driving capacity of a pump circuit by operating selectively a dual mode pump in a standby/active mode. CONSTITUTION: A voltage level detection portion(110) is formed with a standby mode voltage level detector(112) and an active mode voltage level detector(114) which are arranged on a center region of a chip. An oscillator portion(120) is formed with the first active mode oscillator(122) arranged on an upper region of the chip and a standby mode oscillator(124) and the second active mode oscillator(126) arranged on the center region of the chip, and the third active mode oscillator(128) arranged on a lower region of the chip. A pump circuit portion(140) is formed with an active mode pump circuit(142) arranged on the upper region of the chip, a dual mode pump circuit(144) arranged on the center region of the chip, and an active mode pump circuit(146) arranged on the lower region of the chip.
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