| 摘要 |
PURPOSE: To provide semiconductor memory devices including DRAM having high integration and improved manufacturing yield, and a manufacture thereof. CONSTITUTION: This memory device comprises cell contacts 9 which are formed in a first interlayer insulation film 6 covering transistors Tm formed on a semiconductor substrate 1 and electrically connected to the transistors Tm, bit contacts 12 which are formed in a second interlayer insulation film 10 and electrically connected to the cell contacts 9, bit lines 15 which are formed on the second interlayer insulation film 10 and connected to bit contacts 12, capacitors 27 formed on a third interlayer insulation film 17 for covering the bit lines 15, capacitor contacts 19 arranged through the second and third interlayer films 10, 17 for connecting capacitors 27 to cell contacts 9, and sidewalls on the surface of the bit lines 15, having etching selectivity to the second and third interlayer insulation films 10, 17. The cell contacts 9 are covered with the second interlayer insulation film 10. |
