| 摘要 |
PURPOSE: A method for fabricating a bitline and a bitline contact is provided to remarkably reduce coupling between adjacent bitlines by performing a retention anneal process in a standard dynamic random access memory(DRAM) process before a bitline material and, optionally, a low k dielectric are deposited. CONSTITUTION: The bitline contact(2) is formed in the first dielectric layer(4). The bitline(1) of a conductive material such as copper or aluminum having a lower resistivity than the bitline contact material such as tungsten is defined in the second dielectric layer(5). The second dielectric layer is made of a low k dielectric.
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