| 摘要 |
PURPOSE: A transistor is provided to make a channel length reduced by the lower portion of a gate electrode having a smaller width, by performing a damascene process so that the upper portion of the gate electrode is wider than the lower portion of the gate electrode. CONSTITUTION: The gate electrode(47) is formed on a semiconductor substrate(31) by interposing a gate insulation layer so that the upper portion of the gate electrode is broader than the lower portion of the gate electrode. An insulation layer is formed on a sidewall of the lower portion of the gate electrode between the upper portion of the gate electrode and the semiconductor substrate. A source/drain impurity region of a lightly-doped-drain(LDD) structure is formed in the surface of the semiconductor substrate at both sides of the gate electrode.
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