| 摘要 |
<p>A dry-etching method using an apparatus where a wafer is placed on either of a pair of opposed electrodes provided in an etching chamber, and high-frequency power is supplied to both the opposed electrodes to effect a plasma etching. The plasma etching uses a gas containing at least Cl2 and HBr. Trenches (104a, 104b) are formed, as shown in Fig. 1(b), in a silicon wafer (101) shown in Fig. 1(a) through a mask layer such as a nitride silicon layer (103). While adjusting the high-frequency power supplied to the opposed electrode where the wafer is placed, the shape of the sidewalls (105a, 105b) of the trenches (104a, 104b) is controlled. Thus, the trenches can have desired shapes even if the widths of the trenches are different.</p> |
